dm n4020l fde d atasheet number: ds 35819 rev. 4 - 2 1 of 6 www.diodes.com july 2017 ? diodes incorporated dm n4020l f de advance information 40v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c 4 0 v 20 m ? @ v gs = 10 v 8.0a 28 m? @ v gs = 4 .5v 6.7a description and applications this new generation mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? general purpose interfacing switch ? power management functions featu res and benefits ? 0. 6 mm p rofile C i deal fo r l ow p rofile a pplications ? pcb f ootprint of 4mm 2 ? low gate threshold voltage ? low on - resistance ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - dfn 2020 - 6 ( type e ) ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0065 grams ( a pproximate) ordering information (note 4 ) part number marking reel s ize (inches) quantity p er r eel dm n 4020l fde - 7 ne 7 3,000 dm n4020l fde - 13 ne 13 10 ,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green " products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - dfn 2020 - 6 ( type e ) bottom view pin out ne = product type marking code ym = date code marking y = year (ex: e = 201 7 ) m = month (ex: 9 = september) equivalent circuit d s g e4 ne y m
dm n4020l fde d atasheet number: ds 35819 rev. 4 - 2 2 of 6 www.diodes.com july 2017 ? diodes incorporated dm n4020l f de advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 40 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25c t a = + 70c i d 8.0 6.3 a t < 10s t a = + 25c t a = + 70c i d 9.5 7.5 a continuous drain current (note 6 ) v gs = 4 .5 v steady state t a = + 25c t a = + 70c i d 6.7 5.3 a t < 10s t a = + 25c t a = + 70c i d 8.0 6.4 a pulsed drain curren t ( 10 s p ulse, d uty c ycle = 1% ) i dm 32 a maximum body diode continuous current i s 2.5 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) t a = + 25c p d 0.66 w t a = + 70 c 0.42 thermal resistance, junction to ambient (note 5 ) s teady s tate r ? ja 189 c/w t < 10s 132 total power dissipation (note 6 ) t a = + 25c p d 2.03 w t a = + 70 c 1.31 thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 61 c/w t < 10s 43 thermal resistance, junction to case (note 6 ) r ? j c 9.3 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 40 gs = 0v, i d = 250 a j = + 25c i dss ds = 40 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 1.4 ds = v gs , i d = 250 a ds(on) ? gs = 10 v, i d = 8 a 20 28 v gs = 4 .5v, i d = 4 a diode forward voltage v sd gs = 0v, i s = 1 a dynamic characteristic s (note 8 ) input capacitance c iss ds = 2 0 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 2 0 v, i d = 8 a total gate charge ( v gs = 1 0v ) q g gs gd d( on ) ds = 20 v, r l = 2.5 v g s = 10 v, r g = 3 r d( off ) f rr f = 8 a, di/dt = 1 0 0a/s rr notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc b oard, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect . 8 . guaranteed by design. not subject to production testing .
dm n4020l fde d atasheet number: ds 35819 rev. 4 - 2 3 of 6 www.diodes.com july 2017 ? diodes incorporated dm n4020l f de advance information 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 12 14 16 18 20 i , drain current (a) d figure 5 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a i d , drain current (a) r d s(on) , drain - source on - resistance ( ? 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.5 1 1.5 2 2.5 3 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d v = 2.8v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 10v gs v = 4.0v gs 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0 2 4 6 8 10 12 14 16 18 20 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 10v gs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = 4a d i = 8a d 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 4.5v i = 5a gs d v = v i = 10a gs d 10
dm n4020l fde d atasheet number: ds 35819 rev. 4 - 2 4 of 6 www.diodes.com july 2017 ? diodes incorporated dm n4020l f de advance information 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 1ma i d = 250 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 v , source - drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a i s , source current (a) r ja (t) = r(t) * r ja r ja = 1 77 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v i = 5a gs d v = v i = 8a gs d 10 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 177 C /w duty cycle, d = t1/ t2 ?? ? ja ja ja
dm n4020l fde d atasheet number: ds 35819 rev. 4 - 2 5 of 6 www.diodes.com july 2017 ? diodes incorporated dm n4020l f de advance information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type e) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type e) u - dfn2020 - 6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 k2 z all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3 x1 y3 x (6x) c x2 y1 y2 y (2x)
dm n4020l fde d atasheet number: ds 35819 rev. 4 - 2 6 of 6 www.diodes.com july 2017 ? diodes incorporated dm n4020l f de advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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